SPECIAL ISSUE ON QUATERNARY COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES: SOURCES AND DETECTORSSTILLMAN GE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 117Article

GALLIUM ARSENIDE AND RELATED COMPOUNDS, 1982. PAPERS FROM THE TENTH INTERNATIONAL SYMPOSIUM ON GALLIUM ARSENIDE AND RELATED COMPOUNDS HELD AT ALBUQUERQUE, NEW MEXICO, USA, 19-22 SEPTEMBER 1982STILLMAN GE ED.1982; CONFERENCE SERIES - INSTITUTE OF PHYSICS; ISSN 0305-2346; GBR; DA. 1982 PUBL. 1983; NO 65; XVII-650 P.; BIBL. DISSEM.Conference Paper

SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS.WOLFE CM; STILLMAN GE.1975; PHYS. APPL. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 10; PP. 564-567; BIBL. 30 REF.Article

ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS.STILLMAN GE; WOLFE CM.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 69-88; BIBL. 1 P.Article

ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTSCOOK LW; BULMAN GE; STILLMAN GE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 589-591; BIBL. 7 REF.Article

AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONSMILANO RA; DAPKUS PD; STILLMAN GE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 266-274; BIBL. 42 REF.Article

SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURESSHICHIJO H; HESS K; STILLMAN GE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 2; PP. 89-91; BIBL. 21 REF.Article

TEMPERATURE DEPENDENT ELECTRON VELOCITY-FIELD CHARACTERISTICS FOR IN_0.53GA_0.47AS AT HIGH ELECTRIC FIELDSWINDHORN TH; COOK LW; STILLMAN GE et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1065-1082; BIBL. 33 REF.Article

WAVE INTERPRETATION OF NL PRODUCT IN GUNN INSTABILITYLAI HH; BONG HO; STILLMAN GE et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 493-498; ABS. GER; BIBL. 6 REF.Article

ROOM-TEMPERATURE ELECTRON DIFFUSION LENGTHS IN LIQUID PHASE EPITAXIAL INGAASP AND INGAASTASHIMA MM; COOK LW; STILLMAN GE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 960-961; BIBL. 10 REF.Article

EFFECTS OF A FINITE MELT ON THE THICKNESS AND COMPOSITION OF LIQUID PHASE EPITAXIAL IN INGAASP AND INGAAS LAYERS GROWN BY THE DIFFUSION-LIMITED STEP-COOLING TECHNIQUECOOK LW; TASHIMA MM; STILLMAN GE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 11; PP. 904-907; BIBL. 5 REF.Article

COMPOUND SEMICONDUCTORSHOLONYAK N JR; STILLMAN GE; WOLFE CM et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 487C-499C; BIBL. 128 REF.Article

EPITAXIAL GROWTH OF IN_XGA_1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS.WOLFE CM; STILLMAN GE; MELNGAILIS I et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1506-1509; BIBL. 16 REF.Article

ELECTROABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTSBULMAN GE; COOK LW; STILLMAN GE et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1189-1200; 11 P.; BIBL. 21 REF.Article

THE EFFECT OF LATTICE MISMATCH ON HOLE DIFFUSION LENGTHS IN LIQUID PHASE EPITAXIAL INGAASP (LAMBDA _G=1.15 MU M)/INPTASHIMA MM; COOK LW; TABATABAIE N et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1009-1011; BIBL. 6 REF.Article

LIQUID-PHASE EPITAXIAL GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR THE 1.15-1.31-MU M SPECTRAL REGION.FENG M; WINDHORN TH; TASHIMA MM et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 758-761; BIBL. 18 REF.Article

AUGER PROFILE STUDY OF THE INFLUENCE OF LATTICE MISMATCH ON THE LPE INGAASP-INP HETEROJUNCTION INTERFACEFENG M; COOK LW; TASHIMA MM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 697-699; BIBL. 15 REF.Article

THE INFLUENCE OF LPE GROWTH TECHNIQUES ON THE ALLOY COMPOSITION OF INGAASPFENG M; COOK LW; TASHIMA MM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 292-295; BIBL. 27 REF.Article

ELECTROABSORPTION IN GAAS AND ITS APPLICATION TO WAVEGUIDE DETECTORS AND MODULATORS.STILLMAN GE; WOLFE CM; BOZLER CO et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 544-546; BIBL. 15 REF.Article

ANOMALOUSLY HIGH "MOBILITY" IN GAASWOLFE CM; STILLMAN GE; SPEARS DL et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 732-734; BIBL. 15 REF.Serial Issue

INGAASP PHOTODIODESSTILLMAN GE; COOK LW; TABATABAIE N et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 364-381; BIBL. 91 REF.Article

AN ANALYTICAL EVALUATION OF GAAS GROWN WITH COMMERCIAL AND REPURIFIED TRIMETHYLGALLIUMHESS KL; DAPKUS PD; MANASEVIT HM et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1115-1137; BIBL. 35 REF.Article

TRANSIENT AND NOISE CHARACTERISTICS OF QUANTUM-WELL HETEROSTRUCTURE LASERSANDERSON ER; VOJAK BA; HOLONYAK N JR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 585-587; BIBL. 16 REF.Article

BE-IMPLANTED 1.3-MU M INGAASP AVALANCHE PHOTODETECTORSFENG M; OBERSTAR JD; WINDHORN TH et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 591-593; BIBL. 30 REF.Article

IN_1-XGA_XP_1-XAS_Z DOUBLE-HETEROJUNCTION-LASER OPERATION (77^OK, YELLOW) IN AN EXTERNAL GRATING CAVITY.WRIGHT PD; COLEMAN JJ; HOLONYAK N JR et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3580-3586; BIBL. 14 REF.Article